Chih-Tang Sah

 

Chih-Tang Sah

https://en.wikipedia.org/wiki/Chih-Tang_Sah

Evolution of the MOS transistor –– from conception of VLSI

by Chih-tang Sah, fellow, IEEE

manuscript received August 1, 1986;

revised July 14, 1988

October 1988

(silicon MOS aging and failure machanism as well as reliablity physics, chemistry, and modeling, ...)

([ IEEE MOS transistor (subject), English (language) ])

([ pdf image file format, not TEXT, non search able, 47 pages ])

http://www.dejazzer.com/ece723/resources/Evolution_of_the_MOS_transistor.pdf

 

   Historical developments of the metal-oxide-semiconductor field-effect-transitor (MOSFET) during the last 60 years are reviewed, from 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which led to the laboratory demonstration of the modern silicon MOSFET 30 years olater in 1960.  
   A survey is then made of the milestones of the past 30 years leading to the latest submicron silicon logic CMOS (complementary MOS) and BICMOS (bipolar-junction-transitor CMOS combined) arrays and the 3-dimensional and ferroelectric extensions of Dennard's one-transistor dynamic random access memory (DRAM) cell.  Status of the submicron lithographic technologies (deep ultra-violet light, x-ray, electron-beam) are summarized.
   Future trends of memory cell density and logic gate speed are projected.
   Comparisons of the switching speed of the silicon MOSFET with that of silicon biploar and GaAs field-effect transistors are reviewed.  
   Use of high-temperature superconducting wires and GaAs-on-Si monolithic semiconductor optical clocks to break the interconnect-wiring delay barrier is discussed.
   Further needs in basic research and mathematical modeling on the failure mechanisms in submicron silicon transistors at high electric fields (hot electron effects) and in interconnection conductors at high current densities and low as well as high electric fields (electromigration) are indicated.
 

source:
       https://en.wikipedia.org/wiki/Mohamed_M._Atalla
According to Fairchild Semiconductor engineer Chih-Tang Sah, the surface passivation process developed by Atalla and his team "blazed the trail" that led to the development of the silicon integrated circuit.[25][23] Atalla's silicon transistor passivation technique by thermal oxide[26] was the basis for several important inventions in 1959: the MOSFET (MOS transistor) by Atalla and Dawon Kahng at Bell Labs, the planar process by Jean Hoerni at Fairchild Semiconductor.[22][25][27]

 [23]  Sah, Chih-Tang (October 1988). "Evolution of the MOS transistor-from conception to VLSI" (PDF). Proceedings of the IEEE. 76 (10): 1280–1326 (1290). Bibcode:1988IEEEP..76.1280S. doi:10.1109/5.16328. ISSN 0018-9219. "Those of us active in silicon material and device research during 1956–1960 considered this successful effort by the Bell Labs group led by Atalla to stabilize the silicon surface the most important and significant technology advance, which blazed the trail that led to silicon integrated circuit technology developments in the second phase and volume production in the third phase."
       http://www.dejazzer.com/ece723/resources/Evolution_of_the_MOS_transistor.pdf

https://en.wikipedia.org/wiki/Jean_Hoerni